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장비검색
장비명 Sputter
모델명 ENDURA-5500
제조사 AMAT
보유기관 나노종합기술원
장비분류 공정
담당자 심갑섭
전화 042-366-1563

| 사양(구성및성능)


□ Wafer size : 200mm lat

□ Dual loadlock

□ Process module
o PM1 : IMP (Ion Metal Plasma) Ti
4N5, Ti Target, 200℃
Dep. rate : > 600A / min
Resistivity : 80~100uΩ-cm
Rs unif. : < 5~10% (1σ)
o PM2 : MOCVD TiN
TDMAT Source, 400℃ (Tetrakis Dimethylamino Titanium)
Dep. rate : > 350A / min
Bulk resistivity : < 600 uΩ-cm
Thickness Unif. : < 5% (1σ) @ 100A o PM3 : ESC Al
5N5, Al (0.5% Cu) Alloy Target, 300℃
Dep. rate : > 15A / sec
Resistivity : 2.8~3.2uΩ-cm
Rs unif. : < 3% (1σ) o PM4 : Co
4N5 ferromagnetic Co Target, 300℃
Dep. rate : > 12A / sec
Resistivity : 27 ±αuΩ-cm @ 120A
Rs unif. : < 6% (1σ)
o PM5 : PVD Ti / TiN
4N5 G12 Ti Target , 300℃
Dep. rate : > 1500A / min @ Ti > 900A / min @ TiN
Resistivity : ~ 160uΩ-cm @ TiN
Rs unif. : < 3% (1σ)

| 용도


□ RF Etching
o Etch Rate: > 350Å/min, Etch Uniformity: <7%

□ IMP Ti Process
o Depo Rate: >600A at 2.5kw, Resistivity : < 90 μΩ-㎝ at 200A

□ IMP TiN Process
o Depo Rate: >200A at 4kw, Resistivity : <120 μΩ-㎝ at

□ MOCVD TiN Process
o Depo Rate: >350A, Bulk Resistivity : <600 μΩ-㎝,

□ Al Process
o Depo Rate: > 15Å/Kw/sec, Resistivity : 2.8~3.2μΩ-㎝
o Reflectivity:>190 at 436nm (λ=365㎚,REF=Al Mirror)